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STB80NF10 STP80NF10
N-channel 100V - 0.012 - 80A - TO-220 / D2PAK Low gate charge STripFETTM II Power MOSFET
General features
Type STP80NF10 STB80NF10

VDSS 100V 100V
RDS(on) <0.015 <0.015
ID(1) 80A 80A
3
Exceptional dv/dt capability 100% Avalanche tested Application oriented characterization
TO-220
1 2
3 1
DPAK
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP80NF10 STB80NF10T4 Marking P80NF10@ B80NF10@ Package TO-220 DPAK Packaging Tube Tape & reel
January 2007
Rev 16
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www.st.com 14
Contents
STP80NF10 - STB80NF10
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STP80NF10 - STB80NF10
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID(1) ID (1) IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 100 20 80 80 320 300 2 7 350 -55 to 175 Unit V V A A A W W/C V/ns mJ C
PTOT dv/dt (3) EAS(4) Tstg Tj
Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Operating junction temperature
1. Limited by package 2. Pulse width limited by safe operating area 3. ISD < 80A, di/dt < 300A/s, VDD= 80 % V(BR)DSS 4. Starting Tj = 25C, ID = 80A, VDD = 50V
Table 2.
Symbol Rthj-case Rthj-amb Tl
Thermal resistance
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 0.5 62.5 300 Unit C/W C/W C
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Electrical characteristics
STP80NF10 - STB80NF10
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS = 0 VDS = Max rating VDS = Max rating @125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 40A 2 3 0.012 Min. 100 1 10 100 4 0.015 Typ. Max. Unit V A A nA V
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V , ID =40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 50 5500 700 175 135 23 51.3 182 Max. Unit S pF pF pF nC nC nC
VDD = 50V, ID = 80A, VGS = 10V
1. Pulsed: pulse duration = 300 s, duty cycle 1.5 %
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STP80NF10 - STB80NF10 Table 5.
Symbol td(on) tr td(off) tf
Electrical characteristics
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 50V, ID= 40A, RG = 4.7, VGS=10V (see Figure 14) Min. Typ. 26 80 116 60 Max. Unit ns ns ns ns
Table 6.
Symbol ISD ISDM(1) VSD
(2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VGS = 0 ISD=80A, VDD = 50V di/dt = 100A/s,Tj=150C 106 450 8.5 Test conditions Min Typ. Max 80 320 1.3 Unit A A V ns nC A
trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed:pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STP80NF10 - STB80NF10
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STP80NF10 - STB80NF10 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STP80NF10 - STB80NF10
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STP80NF10 - STB80NF10
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP80NF10 - STB80NF10
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STP80NF10 - STB80NF10
Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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Packaging mechanical data
STP80NF10 - STB80NF10
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STP80NF10 - STB80NF10
Revision history
6
Revision history
Table 7.
Date 04-Nov-2003 13-Dec-2004 16-Dec-2004 27-Jan-2005 22-Feb-2005 28-Feb-2005 01-Mar-2005 06-Apr-2006 25-Jan-2007
Revision history
Revision 8 9 10 11 12 13 14 15 16 Changes New datasheet according to PCN DSG-TRA/03/382 DPAK inserted @ inserted in table 2 for TO-220 marking New value in table 3 Id value changed New value in table 3 Vgs value changed The document has been reformatted Typo mistake on page 1 (order codes)
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STP80NF10 - STB80NF10
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